BURKE-GOVEY, Conor P.; CASTANET, Uli; WARRING, Harry; NAU, A.; RUCK, Ben J.; MAJIMEL, Jérôme; PLANK, Natalie O. V.

doi:10.1088/1361-6528/aa5e43

Métadonnées

Licence d’utilisation du document

BURKE-GOVEY, Conor P.
The MacDiarmid Institute for Advanced Materials and Nanotechnology
School of Chemical and Physical Sciences

CASTANET, Uli
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

WARRING, Harry
School of Chemical and Physical Sciences
The MacDiarmid Institute for Advanced Materials and Nanotechnology

Langue

Article de revue

Ce document a été publié dans

Nanotechnology. 2017, vol. 28, n° 12, p. 124003 (7 p.)

Institute of Physics

Résumé en anglais

We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on–off ratios of 105 and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state.< Réduire

Métadonnées

Licence d’utilisation du document

Realizing field-dependent conduction in ZnO nanowires without annealing

Langue

Ce document a été publié dans

Résumé en anglais

DOI

Origine

Unités de recherche