Realizing field-dependent conduction in ZnO nanowires without annealing
| hal.structure.identifier | The MacDiarmid Institute for Advanced Materials and Nanotechnology | |
| hal.structure.identifier | School of Chemical and Physical Sciences | |
| dc.contributor.author | BURKE-GOVEY, Conor P. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | CASTANET, Uli | |
| hal.structure.identifier | School of Chemical and Physical Sciences | |
| hal.structure.identifier | The MacDiarmid Institute for Advanced Materials and Nanotechnology | |
| dc.contributor.author | WARRING, Harry | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | NAU, A. | |
| hal.structure.identifier | School of Chemical and Physical Sciences | |
| hal.structure.identifier | The MacDiarmid Institute for Advanced Materials and Nanotechnology | |
| dc.contributor.author | RUCK, Ben J. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | MAJIMEL, Jérôme | |
| hal.structure.identifier | School of Chemical and Physical Sciences | |
| hal.structure.identifier | The MacDiarmid Institute for Advanced Materials and Nanotechnology | |
| dc.contributor.author | PLANK, Natalie O. V. | |
| dc.date.issued | 2017 | |
| dc.identifier.issn | 0957-4484 | |
| dc.description.abstractEn | We report on the low-temperature fabrication of field-effect transistors by bridging pre-patterned electrodes using ZnO nanowires grown in situ, which operate without requiring post-growth processing or annealing. The devices show good performance using as-grown nanowires, with on–off ratios of 105 and threshold voltages of 2 V. Electron microscopy shows the field-dependent nanowires hierarchically nucleate from larger ZnO nanorods, and both are oriented along a common c-axis. A high nanowire surface-to-volume ratio allows depleting electron traps on the nanowire surface to compensate intrinsic electron donors present throughout the nanowire bulk. This eliminates the need to reduce the electron concentration through high-temperature annealing, making the nanowires naturally field-dependent in their as-grown state. | |
| dc.language.iso | en | |
| dc.publisher | Institute of Physics | |
| dc.title.en | Realizing field-dependent conduction in ZnO nanowires without annealing | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1088/1361-6528/aa5e43 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Nanotechnology | |
| bordeaux.page | 124003 (7 p.) | |
| bordeaux.volume | 28 | |
| bordeaux.issue | 12 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-01494330 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-01494330v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Nanotechnology&rft.date=2017&rft.volume=28&rft.issue=12&rft.spage=124003%20(7%20p.)&rft.epage=124003%20(7%20p.)&rft.eissn=0957-4484&rft.issn=0957-4484&rft.au=BURKE-GOVEY,%20Conor%20P.&CASTANET,%20Uli&WARRING,%20Harry&NAU,%20A.&RUCK,%20Ben%20J.&rft.genre=article |
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