RABIEE GOLGIR, Hossein; LI, Dawei; KERAMATNEJAD, Kamran; ZOU, Qi Ming; XIAO, Jun; WANG, Fei; JIANG, Lan; SILVAIN, Jean-François; LU, Yong Feng

doi:10.1021/acsami.7b03554

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RABIEE GOLGIR, Hossein
Department of Electrical Engineering

LI, Dawei
Department of Electrical Engineering

KERAMATNEJAD, Kamran
Department of Electrical Engineering

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ACS Applied Materials & Interfaces. 2017, vol. 9, n° 25, p. 21539-21547

Washington, D.C. : American Chemical Society

Résumé en anglais

In this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal–organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al2O3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W–1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.< Réduire

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fast growth

GaN epilayer

LMOCVD

ultraviolet photodetector

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Fast growth of GaN epilayers via laser-assisted metal-organic chemical vapor deposition for ultraviolet photodetector applications

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