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Fast growth of GaN epilayers via laser-assisted metal-organic chemical vapor deposition for ultraviolet photodetector applications

hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorRABIEE GOLGIR, Hossein
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorLI, Dawei
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorKERAMATNEJAD, Kamran
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorZOU, Qi Ming
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorXIAO, Jun
hal.structure.identifierDepartment of Mechanical & Materials Engineering
dc.contributor.authorWANG, Fei
hal.structure.identifierSchool of Mechanical Engineering
dc.contributor.authorJIANG, Lan
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSILVAIN, Jean-François
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorLU, Yong Feng
dc.date.issued2017
dc.identifier.issn1944-8244
dc.description.abstractEnIn this study, we successfully developed a carbon dioxide (CO2)-laser-assisted metal–organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al2O3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W–1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.
dc.language.isoen
dc.publisherWashington, D.C. : American Chemical Society
dc.subject.enfast growth
dc.subject.enGaN epilayer
dc.subject.enLMOCVD
dc.subject.enultraviolet photodetector
dc.title.enFast growth of GaN epilayers via laser-assisted metal-organic chemical vapor deposition for ultraviolet photodetector applications
dc.typeArticle de revue
dc.identifier.doi10.1021/acsami.7b03554
dc.subject.halChimie/Matériaux
bordeaux.journalACS Applied Materials & Interfaces
bordeaux.page21539-21547
bordeaux.volume9
bordeaux.issue25
bordeaux.peerReviewedoui
hal.identifierhal-01588368
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01588368v1
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