RIANE, Rabah; MATAR, Samir F.; HAMMERELAINE, Lahcene

doi:10.1515/znb-2008-1015

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RIANE, Rabah
Modelling and Simulation in Materials Science Laboratory

MATAR, Samir F.
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

HAMMERELAINE, Lahcene
Laboratoire des Sciences fondamentales [LSF]

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Zeitschrift fur Naturforschung B. 2008, vol. 63, n° 10, p. 1231-1237

Verlag der Zeitschrift Fuer Naturforschung

Résumé en anglais

First principles calculations of the electronic band structures of zinc blende-type GaN and BN and their 1 : 1 mixture B0.5Ga0.5N were carried out within DFT using the augmented plane wave method with both GGA and LDA approximations for the effects of exchange and correlation. Equilibrium lattice constants were determined from the total-energy minimization method. The results are compared with those of previous calculations and with experimental measurements. In agreement with these data, ZB-BN is an indirect (Γ →X) wide-gap semiconductor (4.35 eV) while ZB-GaN has a direct gap of 1.9 eV atΓ . For ZBB0.5Ga0.5N we predict a direct band gap of 3.35 eV. Electron charge densities are computed for the unit cell, and ionicity factors are derived for all systems.< Réduire

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DFT

GGA

Wide-gap semiconductors

FP-LAW

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Ab initio calculations of electronic band structure and charge densities of zinc blende-type GaN, BN and their solid solution B0.5Ga0.5N

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