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hal.structure.identifierModelling and Simulation in Materials Science Laboratory
dc.contributor.authorRIANE, Rabah
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMATAR, Samir F.
hal.structure.identifierLaboratoire des Sciences fondamentales [LSF]
dc.contributor.authorHAMMERELAINE, Lahcene
dc.date.issued2008
dc.identifier.issn0932-0776
dc.description.abstractEnFirst principles calculations of the electronic band structures of zinc blende-type GaN and BN and their 1 : 1 mixture B0.5Ga0.5N were carried out within DFT using the augmented plane wave method with both GGA and LDA approximations for the effects of exchange and correlation. Equilibrium lattice constants were determined from the total-energy minimization method. The results are compared with those of previous calculations and with experimental measurements. In agreement with these data, ZB-BN is an indirect (Γ →X) wide-gap semiconductor (4.35 eV) while ZB-GaN has a direct gap of 1.9 eV atΓ . For ZBB0.5Ga0.5N we predict a direct band gap of 3.35 eV. Electron charge densities are computed for the unit cell, and ionicity factors are derived for all systems.
dc.language.isoen
dc.publisherVerlag der Zeitschrift Fuer Naturforschung
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/
dc.subject.enDFT
dc.subject.enGGA
dc.subject.enWide-gap semiconductors
dc.subject.enFP-LAW
dc.title.enAb initio calculations of electronic band structure and charge densities of zinc blende-type GaN, BN and their solid solution B0.5Ga0.5N
dc.typeArticle de revue
dc.identifier.doi10.1515/znb-2008-1015
dc.subject.halChimie/Matériaux
bordeaux.journalZeitschrift fur Naturforschung B
bordeaux.page1231-1237
bordeaux.volume63
bordeaux.issue10
bordeaux.peerReviewedoui
hal.identifierhal-00338360
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00338360v1
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