ARTEMENKO, Alla; ELISSALDE, Catherine; CHUNG SEU, U-Chan; ESTOURNÈS, Claude; MORNET, Stéphane; BYKOV, I.; MAGLIONE, Mario

doi:10.1063/1.3495779

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ARTEMENKO, Alla
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Institute for Problems of Material Science

ELISSALDE, Catherine
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

CHUNG SEU, U-Chan
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Ce document a été publié dans

Applied Physics Letters. 2010, vol. 93, n° 13, p. 132901 (3 p.)

American Institute of Physics

Résumé en anglais

With the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for such giant behavior to occur but the underlying conduction and localization mechanisms are not well known. Comparing macroscopic dielectric relaxation to microscopic dynamics of charged defects resulting from electron paramagnetic resonance investigations we identify the actual charged defects in the case of BaTiO3 ceramics and composites. This link between the thermal activation at these two complementary scales may be extended to the numerous oxides were giant dielectric behavior was found.< Réduire

Mots clés en anglais

Hopping conduction

Paramagnetic resonance

Permittivity

Silicon compounds

Matériaux

Barium compounds

Dielectric relaxation

Ferroelectric ceramics

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Linking hopping conductivity to giant dielectric permittivity in oxides

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