GUILLEMET, Thomas; XIE, Z. Q.; ZHOU, Y. S.; PARK, J. B.; VEILLERE, Amélie; XIONG, W.; HEINTZ, Jean-Marc; SILVAIN, Jean-François; CHANDRA, Namas; LU, Y. F.

doi:10.1021/am201010h

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GUILLEMET, Thomas
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Department of Electrical Engineering

XIE, Z. Q.
Department of Electrical Engineering

ZHOU, Y. S.
Department of Electrical Engineering

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ACS Applied Materials & Interfaces. 2011, vol. 3, n° 10, p. 4120-4125

Washington, D.C. : American Chemical Society

Résumé en anglais

Diamond films were deposited on silicon and tungsten carbide substrates in open air through laser-assisted combustion synthesis. Laser-induced resonant excitation of ethylene molecules was achieved in the combustion process to promote diamond growth rate. In addition to microstructure study by scanning electron microscopy, Raman spectroscopy was used to analyze the phase purity and residual stress of the diamond films. High-purity diamond films were obtained through laser-assisted combustion synthesis. The levels of residual stress were in agreement with corresponding thermal expansion coefficients of diamond, silicon, and tungsten carbide. Diamond-film purity increases while residual stress decreases with an increasing film thickness. Diamond films deposited on silicon substrates exhibit higher purity and lower residual stress than those deposited on tungsten carbide substrates.< Réduire

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Diamond films

Laser-assisted combustion synthesis

Laser-induced resonant excitation

Raman spectroscopy

Residual stress

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Stress and phase purity analyses of diamond films deposited through laser-assisted combustion synthesis

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