LINDIC, Marie-Hélène; PECQUENARD, Brigitte; VINATIER, Philippe; LEVASSEUR, Alain; MARTINEZ, Hervé; GONBEAU, Danielle; PETIT, Pierre Emmanuel; OUVRARD, Guy

doi:10.1016/j.tsf.2005.02.014

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LINDIC, Marie-Hélène
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

PECQUENARD, Brigitte
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

VINATIER, Philippe
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Thin Solid Films. 2005, vol. 484, n° 1-2, p. 113

Elsevier

Résumé en anglais

Different titanium oxysulfide thin films were prepared by rf magnetron sputtering using two types of targets in a pure argon or mixed oxygen/argon atmosphere with a total pressure of 1 or 0.2 Pa. We have studied the influence of the sputtering conditions (target, total pressure, oxygen partial pressure) on the composition, the morphology and the local and electronic structure of our thin films. A set of complementary techniques (scanning electron microscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS)) was used to characterize the thin films. Two types of films have been obtained: thin films prepared from TiS2 target having a composition and a local structure close to TiS3 and thin films obtained from TiS2/TiS3 target characterized by a composition and a local structure close to TiS2. The complementary use of XPS and sulfur K-edge XAS spectroscopies has allowed us to evidence the coexistence of different microdomains into the thin films corresponding respectively to a pure sulfur, a pure oxygen or a mixed sulfur/oxygen environment.< Réduire

Mots clés en anglais

Thin films

Scanning Electron Microscopy

Titanium Sulfides

Titanium oxysulfides

Transmission Electron Microscopy

X-Ray Diffraction

X-Ray Photoelectron Spectroscopy

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Characterization of rf sputtered TiOySz thin films

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