CHUNG SEU, U-Chan; MICHAU, Dominique; ELISSALDE, Catherine; LI, Shunyi; KLEIN, Andreas; MAGLIONE, Mario

doi:10.1016/j.tsf.2011.09.055

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CHUNG SEU, U-Chan
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

MICHAU, Dominique
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

ELISSALDE, Catherine
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Thin Solid Films. 2012, vol. 520, n° 6, p. 1997-2000

Elsevier

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Interdiffusion at interfaces between several materials in integrated structures is becoming more and more challenging. We performed a deep study of diffusion in BaTiO3/Si films using X-Ray Diffraction analysis, Rutherford Backscattering Spectrometry and X-ray Photoelectron Spectroscopy at intermediate annealing stages. We show that controlling local chemistry through inter-diffusion phenomena at interfaces is possible thanks to the structural and chemical matching between BaTiO3 and fresnoite. BaTiO3/Si stacks can serve as a model system to investigate the interphase generation at interfaces.< Leer menos

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Barium titanate

Interface

Rutherford Backscattering Spectrometry (RBS)

Thin films

Diffusion

X-ray photoelectron spectroscopy (XPS)

Interphase growth

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Evidence of diffusion at BaTiO3/silicon interfaces

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