A New High Pressure - Low Temperature Process for the Synthesis and the Crystal Growth of Gallium Nitride
Langue
en
Article de revue
Ce document a été publié dans
High Pressure Research. 2002, vol. 22, n° 3-4, p. 585-588
Taylor & Francis
Résumé en anglais
Gallium nitride can be synthesized by a solvothermal route using ammonia as solvent and a nitriding additive (such as hydrazine hydrochloride NH 2 NH 3 Cl or sodium azide NaN 3 ) encapsulated in melt gallium as chemical ...Lire la suite >
Gallium nitride can be synthesized by a solvothermal route using ammonia as solvent and a nitriding additive (such as hydrazine hydrochloride NH 2 NH 3 Cl or sodium azide NaN 3 ) encapsulated in melt gallium as chemical reagents. The involved temperature and pressure are respectively 600 °C and 150 MPa. The synthesized products are then characterized by X-Ray Diffraction and Scanning Electron Microscopy. The synthesis parameters influence the powder morphology and purity.< Réduire
Mots clés en anglais
Gallium Nitride
Ammonia solvent
Solvothermal synthesis
Supercritical conditions
High pressure
Origine
Importé de halUnités de recherche