A New High Pressure - Low Temperature Process for the Synthesis and the Crystal Growth of Gallium Nitride
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en
Article de revue
Este ítem está publicado en
High Pressure Research. 2002, vol. 22, n° 3-4, p. 585-588
Taylor & Francis
Resumen en inglés
Gallium nitride can be synthesized by a solvothermal route using ammonia as solvent and a nitriding additive (such as hydrazine hydrochloride NH 2 NH 3 Cl or sodium azide NaN 3 ) encapsulated in melt gallium as chemical ...Leer más >
Gallium nitride can be synthesized by a solvothermal route using ammonia as solvent and a nitriding additive (such as hydrazine hydrochloride NH 2 NH 3 Cl or sodium azide NaN 3 ) encapsulated in melt gallium as chemical reagents. The involved temperature and pressure are respectively 600 °C and 150 MPa. The synthesized products are then characterized by X-Ray Diffraction and Scanning Electron Microscopy. The synthesis parameters influence the powder morphology and purity.< Leer menos
Palabras clave en inglés
Gallium Nitride
Ammonia solvent
Solvothermal synthesis
Supercritical conditions
High pressure
Orígen
Importado de HalCentros de investigación