Systematic investigation of the annealing temperature and composition effects on the dielectric properties of solgel BaxSr1-xTiO3 thin films
Langue
en
Article de revue
Ce document a été publié dans
Journal of the European Ceramic Society. 2013, vol. 33, n° 1, p. 139-146
Elsevier
Résumé en anglais
In this work, BaxSr1-xTiO3 solgel thin films (x=0.7, 0.5 and 0.3) deposited on Pt/Si substrate and post-annealed at different temperatures have been investigated. A systematic study of the structure, microstructure and of ...Lire la suite >
In this work, BaxSr1-xTiO3 solgel thin films (x=0.7, 0.5 and 0.3) deposited on Pt/Si substrate and post-annealed at different temperatures have been investigated. A systematic study of the structure, microstructure and of the dielectric properties have been achieved for each composition. To our knowledge, for the first time, a systematic effect of post-deposition annealing temperature and composition is reported. For each Ba/Sr ratio, higher annealing temperature leads to crystallinity improvement and to grain growth. A shift of the ferroelectric to paraelectric transition toward the bulk Curie temperature with the increase of the annealing temperature is shown. These results are correlated with the increase of the permittivity, tunability and dielectric losses measured on MIM capacitors at low frequency. Moreover, the high frequency results, between 800MHz and 30GHz, are in very good agreement with low frequency measurements, and show a huge tunability up to 80% under 600kV/cm.< Réduire
Mots clés en anglais
Films
Grain size
Dielectric Properties
BaTiO3 and titanates
Capacitors
Origine
Importé de halUnités de recherche