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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLEVASSEUR, Delphin
hal.structure.identifierLaboratoire d'analyse et d'architecture des systèmes [LAAS]
dc.contributor.authorBADR EL-DIN EL-SHAARAWI, Heba
hal.structure.identifierÉquipe MIcro et Nanosystèmes pour les Communications sans fil [LAAS-MINC]
dc.contributor.authorPACCHINI, Sébastien
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorROUSSEAU, Anthony
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPAYAN, Sandrine
hal.structure.identifierSTMicroelectronics [Agrate Brianza] [ST-AGRATE]
dc.contributor.authorGUEGAN, Guillaume
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
dc.date.created2012-06-01
dc.date.issued2013
dc.identifier.issn0955-2219
dc.description.abstractEnIn this work, BaxSr1-xTiO3 solgel thin films (x=0.7, 0.5 and 0.3) deposited on Pt/Si substrate and post-annealed at different temperatures have been investigated. A systematic study of the structure, microstructure and of the dielectric properties have been achieved for each composition. To our knowledge, for the first time, a systematic effect of post-deposition annealing temperature and composition is reported. For each Ba/Sr ratio, higher annealing temperature leads to crystallinity improvement and to grain growth. A shift of the ferroelectric to paraelectric transition toward the bulk Curie temperature with the increase of the annealing temperature is shown. These results are correlated with the increase of the permittivity, tunability and dielectric losses measured on MIM capacitors at low frequency. Moreover, the high frequency results, between 800MHz and 30GHz, are in very good agreement with low frequency measurements, and show a huge tunability up to 80% under 600kV/cm.
dc.language.isoen
dc.publisherElsevier
dc.subject.enFilms
dc.subject.enGrain size
dc.subject.enDielectric Properties
dc.subject.enBaTiO3 and titanates
dc.subject.enCapacitors
dc.title.enSystematic investigation of the annealing temperature and composition effects on the dielectric properties of solgel BaxSr1-xTiO3 thin films
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jeurceramsoc.2012.07.041
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
bordeaux.journalJournal of the European Ceramic Society
bordeaux.page139-146
bordeaux.volume33
bordeaux.issue1
bordeaux.peerReviewedoui
hal.identifierhal-00797624
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00797624v1
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