PERUMAL, S.; GORSSE, Stéphane; AIL, Ujwala; DECOURT, Rodolphe; UMARJI, Arun M.

doi:10.1007/s11664-013-2510-6

Métadonnées

Afficher la notice complète

Licence d’utilisation du document

PERUMAL, S.
Materials Research Centre

GORSSE, Stéphane
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

AIL, Ujwala
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

Langue

Article de revue

Ce document a été publié dans

Journal of Electronic Materials. 2013, vol. 46, n° 6, p. 1042-1046

Institute of Electrical and Electronics Engineers

Résumé en anglais

Ingots with compositions CrSi2−x (with 0 < x < 0.1) were synthesized by vacuum arc melting followed by uniaxial hot pressing for densification. This paper reports the temperature and composition dependence of the electrical resistivity, Seebeck coefficient, and thermal conductivity of CrSi2−x samples in the temperature range of 300 K to 800 K. The silicon-deficient samples exhibited substantial reductions in resistivity and Seebeck coefficient over the measured temperature range due to the formation of metallic secondary CrSi phase embedded in the CrSi2 matrix phase. The thermal conductivity was seen to exhibit a U-shaped curve with respect to x, exhibiting a minimum value at the composition of x = 0.04. However, the limit of the homogeneity range of CrSi2 suppresses any further decrease of the lattice thermal conductivity. As a consequence, the maximum figure of merit of ZT = 0.1 is obtained at 650 K for CrSi1.98.< Réduire

Mots clés en anglais

Thermoelectric materials

Chromium disilicide

Intermetallics

Métadonnées

Licence d’utilisation du document

Effect of composition on thermoelectric properties of polycrystalline CrSi2

Langue

Ce document a été publié dans

Résumé en anglais

Mots clés en anglais

DOI

Origine

Unités de recherche