Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
dc.rights.license | open | en_US |
dc.contributor.author | NGO, Thi Huong | |
dc.contributor.author | COMYN, Rémi | |
dc.contributor.author | CHENOT, Sébastien | |
dc.contributor.author | BRAULT, Julien | |
dc.contributor.author | DAMILANO, Benjamin | |
dc.contributor.author | VEZIAN, Stephane | |
dc.contributor.author | FRAYSSINET, Eric | |
dc.contributor.author | COZETTE, Flavien | |
dc.contributor.author | DEFRANCE, N. | |
hal.structure.identifier | OMMIC | |
dc.contributor.author | LECOURT, François | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | LABAT, Nathalie | |
dc.contributor.author | MAHER, Hassan | |
dc.contributor.author | CORDIER, Yvon | |
dc.date.accessioned | 2022-07-12T12:43:52Z | |
dc.date.available | 2022-07-12T12:43:52Z | |
dc.date.issued | 2022 | |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/140440 | |
dc.description.abstractEn | We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major key to increase the maximum drain current in the transistors and enables the co-integration with depletion mode devices. | |
dc.description.sponsorship | Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération - ANR-16-CE24-0026 | en_US |
dc.description.sponsorship | Réseau national sur GaN - ANR-11-LABX-0014 | en_US |
dc.language.iso | EN | en_US |
dc.subject.en | HEMT | |
dc.subject.en | GaN | |
dc.subject.en | Selective sublimation | |
dc.subject.en | Regrowth | |
dc.title.en | Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors | |
dc.type | Article de revue | en_US |
dc.identifier.doi | 10.1016/j.sse.2021.108210 | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics]/Electronique | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics]/Matériaux | en_US |
bordeaux.journal | Solid-State Electronics | en_US |
bordeaux.page | 108210 | en_US |
bordeaux.volume | 188 | en_US |
bordeaux.hal.laboratories | Laboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218 | en_US |
bordeaux.institution | Université de Bordeaux | en_US |
bordeaux.institution | Bordeaux INP | en_US |
bordeaux.institution | CNRS | en_US |
bordeaux.peerReviewed | oui | en_US |
bordeaux.inpress | non | en_US |
bordeaux.import.source | hal | |
hal.identifier | hal-03467546 | |
hal.version | 1 | |
hal.export | false | |
workflow.import.source | hal | |
dc.rights.cc | Pas de Licence CC | en_US |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Solid-State%20Electronics&rft.date=2022&rft.volume=188&rft.spage=108210&rft.epage=108210&rft.eissn=0038-1101&rft.issn=0038-1101&rft.au=NGO,%20Thi%20Huong&COMYN,%20R%C3%A9mi&CHENOT,%20S%C3%A9bastien&BRAULT,%20Julien&DAMILANO,%20Benjamin&rft.genre=article |