Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
Language
EN
Article de revue
This item was published in
Solid-State Electronics. 2022, vol. 188, p. 108210
English Abstract
We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on ...Read more >
We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major key to increase the maximum drain current in the transistors and enables the co-integration with depletion mode devices.Read less <
English Keywords
HEMT
GaN
Selective sublimation
Regrowth
ANR Project
Co-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération
Réseau national sur GaN - ANR-11-LABX-0014
Réseau national sur GaN - ANR-11-LABX-0014