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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors

dc.rights.licenseopenen_US
dc.contributor.authorNGO, Thi Huong
dc.contributor.authorCOMYN, Rémi
dc.contributor.authorCHENOT, Sébastien
dc.contributor.authorBRAULT, Julien
dc.contributor.authorDAMILANO, Benjamin
dc.contributor.authorVEZIAN, Stephane
dc.contributor.authorFRAYSSINET, Eric
dc.contributor.authorCOZETTE, Flavien
dc.contributor.authorDEFRANCE, N.
hal.structure.identifierOMMIC
dc.contributor.authorLECOURT, François
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLABAT, Nathalie
dc.contributor.authorMAHER, Hassan
dc.contributor.authorCORDIER, Yvon
dc.date.accessioned2022-07-12T12:43:52Z
dc.date.available2022-07-12T12:43:52Z
dc.date.issued2022
dc.identifier.issn0038-1101en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/140440
dc.description.abstractEnWe report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the thin 2 nm AlN barrier layer. Furthermore, the regrowth of AlGaN is a major key to increase the maximum drain current in the transistors and enables the co-integration with depletion mode devices.
dc.description.sponsorshipCo-intégration des transistors GaN à enrichissement et à déplétion pour les circuits de communication RF de la prochaine génération - ANR-16-CE24-0026en_US
dc.description.sponsorshipRéseau national sur GaN - ANR-11-LABX-0014en_US
dc.language.isoENen_US
dc.subject.enHEMT
dc.subject.enGaN
dc.subject.enSelective sublimation
dc.subject.enRegrowth
dc.title.enCombination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
dc.typeArticle de revueen_US
dc.identifier.doi10.1016/j.sse.2021.108210en_US
dc.subject.halSciences de l'ingénieur [physics]/Electroniqueen_US
dc.subject.halSciences de l'ingénieur [physics]/Matériauxen_US
bordeaux.journalSolid-State Electronicsen_US
bordeaux.page108210en_US
bordeaux.volume188en_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcehal
hal.identifierhal-03467546
hal.version1
hal.exportfalse
workflow.import.sourcehal
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Solid-State%20Electronics&rft.date=2022&rft.volume=188&rft.spage=108210&rft.epage=108210&rft.eissn=0038-1101&rft.issn=0038-1101&rft.au=NGO,%20Thi%20Huong&COMYN,%20R%C3%A9mi&CHENOT,%20S%C3%A9bastien&BRAULT,%20Julien&DAMILANO,%20Benjamin&rft.genre=article


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