Recherche
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Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
(Journal of Crystal Growth. vol. 593, pp. 126779, 2022-09-01)Article de revue -
28-nm FD-SOI CMOS Submilliwatt Ring Oscillator-Based Dual-Loop Integer-N PLL for 2.4-GHz Internet-of-Things Applications
(IEEE Transactions on Microwave Theory and Techniques. vol. 70, n° 4, pp. 2207-2216, 2022-04)Article de revue -
Abstraction-based control synthesis using partial information
(European Journal of Control. vol. 63, pp. 214-222, 2022-01)Article de revue -
Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements
(ECS Journal of Solid State Science and Technology. vol. 11, n° 2, pp. 024001, 2022-02-01)Article de revue -
A state of the art and comparison of approaches for performance measurement systems definition and design
(International Journal of Production Research. vol. 57, n° 15-16, pp. 1-21, 2018-09-04)Article de revue -
General enterprise performance measurement architecture
(International Journal of Production Research. pp. 1-21, 2019)Article de revue -
Three-stage churn management framework based on DCN with asymmetric loss
(Expert Systems with Applications. vol. 207, 2022-11-30)Article de revue -
A comprehensive analysis of AlN spacer and AlGaN n-doping effects on the 2DEG resistance in AlGaN/AlN/GaN heterostructures
(Solid-State Electronics. vol. 194, pp. 108322, 2022-08)Article de revue -
Label-Free Study of the Global Cell Behavior during Exposure to Environmental Radiofrequency Fields in the Presence or Absence of Pro-Apoptotic or Pro-Autophagic Treatments
(International Journal of Molecular Medicine and Advanced Sciences. vol. 23, n° 2, pp. 658, 2022-01)Article de revue -
Temperature-Dependent Structural Phase Transition in Rubrene Single Crystals: The Missing Piece from the Charge Mobility Puzzle?
(Journal of Physical Chemistry Letters. vol. 13, n° 1, pp. 406-411, 2022)Article de revue