Recherche
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Recent Advances on Qualification and Reliability of Cu/SiO2 to Cu/SiO2 Hybrid Bonds for 3D ICs
Communication dans un congrès -
A Zero Temperature Coefficient Voltage Reference, Stability and Versatility using 28nm FD-SOI Technology
Actes de congrès/Proceedings -
Proposal and Application of Equivalent MOSFET with different temperature coefficient of threshold voltage
Actes de congrès/Proceedings -
A Walsh-based Arbitrary Waveform Generator for 5G Applications in 28nm FD-SOI CMOS Technology
Communication dans un congrès -
A (0.75-1.13)mW and (2.4-5.2)ps RMS jitter Integer-N based Dual-Loop PLL for Indoor and Outdoor Positioning in 28nm FD-SOI CMOS Technology
(IEEE Transactions on Circuits and Systems II: Express Briefs. pp. 1-1, 2023-07-05)Article de revue -
A 2.45GHz SiGe Power Amplifier with a Novel Digital Predistortion using Orthogonal Sequences
Communication dans un congrès -
Amplificateur de puissance SiGe en bande Ku avec puissance de sortie élevée et robustesse SWR jusqu'à 120 °C
(IEEE Transactions on Circuits and Systems I: Regular Papers. vol. 70, n° 7, pp. 1-8, 2023-05-29)Article de revue -
A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications
(IEEE Transactions on Circuits and Systems I: Regular Papers. pp. 1-11, 2023-09-13)Article de revue -
A compact bidirectional reconfigurable 2nd-order low-pass filter for 5G FR2 applications
(Proceedings of the 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME), es, Valence, 2023-06)Communication dans un congrès avec actes -
Ku Band SiGe Power Amplifier With High Output Power and SWR Robustness Up to 120 °C
(IEEE Transactions on Circuits and Systems I: Regular Papers. vol. 70, n° 7, pp. 2744 - 2751, 2023-01-01)Article de revue