Browsing IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 by Author "NGO, Thi Huong"
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Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors
NGO, Thi Huong; COMYN, Rémi; CHENOT, Sébastien ...(Solid-State Electronics. vol. 188, pp. 108210, 2022)Article de revueOpen access -
Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors
NGO, Thi Huong; COMYN, Rémi; CHENOT, Sébastien ...(Journal of Crystal Growth. vol. 593, pp. 126779, 2022-09-01)Article de revue