Afficher la notice abrégée

Investigation Into the Moisture Degradation Mechanism of Integrated Stacks Using New Moisture Sensor Design

dc.rights.licenseopenen_US
dc.contributor.authorAYOUB, B.
dc.contributor.authorIMBERT, G.
dc.contributor.authorBELFIS, F.
dc.contributor.authorPARRASSIN, T.
dc.contributor.authorGALLOIS-GARREIGNOT, S.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMISCHLER, Leo
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDUCHAMP, Genevieve
IDREF: 033689849
dc.contributor.authorFRÉMONT, H.
dc.date.accessioned2025-11-17T10:03:11Z
dc.date.available2025-11-17T10:03:11Z
dc.date.issued2025-03-30
dc.date.conference2025-03-30
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/207939
dc.description.abstractEnThis work presents a modified sensor design for moisture diffusion study of dielectrics within 3D integrated circuits. It allows to track, in addition to the electrical capacitance usually measured, the electrical resistance variations with aging. Based on electrical measurements and physical-chemical characterizations, we revealed valuable information on the moisture-induced failure mechanism for Low-k and ULK materials. We have put in evidence that electrical failures within the ULK material are possible under the effect of temperature and humidity. A discussion on the preferential path for Cu diffusion in ULK dielectric is also presented.
dc.language.isoENen_US
dc.subject.enIntegrated circuit reliability
dc.subject.enFailure analysis
dc.subject.enMoisture
dc.title.enInvestigation Into the Moisture Degradation Mechanism of Integrated Stacks Using New Moisture Sensor Design
dc.typeCommunication dans un congrèsen_US
dc.identifier.doi10.1109/irps48204.2025.10983115en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.page1-7en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title2025 IEEE International Reliability Physics Symposium (IRPS)en_US
bordeaux.countryusen_US
bordeaux.conference.cityMontereyen_US
bordeaux.import.sourcecrossref
hal.proceedingsouien_US
hal.conference.end2025-04-03
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.update-error.statusnewSubmission
hal.exporttrue
workflow.import.sourcecrossref
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2025-03-30&rft.spage=1-7&rft.epage=1-7&rft.au=AYOUB,%20B.&IMBERT,%20G.&BELFIS,%20F.&PARRASSIN,%20T.&GALLOIS-GARREIGNOT,%20S.&rft.genre=unknown


Fichier(s) constituant ce document

FichiersTailleFormatVue

Il n'y a pas de fichiers associés à ce document.

Ce document figure dans la(les) collection(s) suivante(s)

Afficher la notice abrégée