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Twisted-Shaped Millimeter-Wave Hybrid Couplers in 150 nm GaN Technology for 5G Applications

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorVIGNESWARAN, Sujeevan
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
hal.structure.identifierInstitut Polytechnique de Bordeaux [Bordeaux INP]
dc.contributor.authorKERHERVE, Eric
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDELTIMPLE, Nathalie
IDREF: 102460280
hal.structure.identifierUnited Monolithic Semiconductors [UMS]
dc.contributor.authorMATHIEU, Romain
hal.structure.identifierUnited Monolithic Semiconductors SAS [UMS]
dc.contributor.authorVIVIEN, Kimon
dc.date.accessioned2025-09-15T07:26:39Z
dc.date.available2025-09-15T07:26:39Z
dc.date.conference2025-06-15
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/207613
dc.description.abstractEnThis paper presents the first implementation of two innovative 90° hybrid couplers in Gallium Nitride (GaN) process designed for 5 G applications. In a very compact design, both couplers target low insertion loss (IL) and large fractional bandwidth (FBW1 dB) to replace conventional couplers. The first coupler exhibits minimum insertion loss of 0.44 dB at 22 GHz with a fractional bandwidth of 31%. The second coupler was optimized to reach a minimum insertion loss of 0.28 dB at 25.5 GHz with a fractional bandwidth of 29%, making it suitable for wideband applications. Both couplers perform with an output phase imbalance of 93∘±2∘. Both circuits were designed using 150 nm GaN on SiC GH15 technology from United Monolithic Semiconductors (UMS).
dc.language.isoENen_US
dc.publisherIEEEen_US
dc.subject.enBalanced architecture
dc.subject.enGaN
dc.subject.enHybrid couplers
dc.subject.enmmWave
dc.subject.enWideband
dc.subject.en5G
dc.titleTwisted-Shaped Millimeter-Wave Hybrid Couplers in 150 nm GaN Technology for 5G Applications
dc.typeCommunication dans un congrèsen_US
dc.identifier.doi10.1109/ims40360.2025.11103947en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.page698-701en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title2025 IEEE/MTT-S International Microwave Symposium - IMS 2025en_US
bordeaux.countryusen_US
bordeaux.title.proceeding2025 IEEE/MTT-S International Microwave Symposium - IMS 2025en_US
bordeaux.conference.citySan Franciscoen_US
bordeaux.import.sourcecrossref
hal.identifierhal-05253925
hal.version1
hal.date.transferred2025-09-15T07:26:41Z
hal.proceedingsouien_US
hal.conference.end2025-06-20
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcecrossref
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.title=Twisted-Shaped%20Millimeter-Wave%20Hybrid%20Couplers%20in%20150%20nm%20GaN%20Technology%20for%205G%20Applications&rft.atitle=Twisted-Shaped%20Millimeter-Wave%20Hybrid%20Couplers%20in%20150%20nm%20GaN%20Technology%20for%205G%20Applications&rft.spage=698-701&rft.epage=698-701&rft.au=VIGNESWARAN,%20Sujeevan&KERHERVE,%20Eric&DELTIMPLE,%20Nathalie&MATHIEU,%20Romain&VIVIEN,%20Kimon&rft.genre=unknown


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