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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDIVERREZ, Gwennael
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorKERHERVE, Eric
dc.contributor.authorCATHELIN, Andreia
dc.date.accessioned2024-05-21T07:43:38Z
dc.date.available2024-05-21T07:43:38Z
dc.date.issued2022-10
dc.date.conference2022-10-24
dc.identifier.issn2473-2001en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/199943
dc.description.abstractEnThis paper presents a compact high efficiency broadband power amplifier (PA) for 5G mm-wave applications covering both 5G bands n257 and n258 (24.25 - 29.50 GHz). Thanks to its two-stacked power cell architecture and its common source driver, the amplifier exhibits a high maximum power added efficiency (PAE) of 43% at 26 GHz for a saturation power of 18.8 dBm. Using 5G modulated signals with PAPRs of 9.9 dB, the power amplifier meets the requirements of the 5G standard with a <sub>avg</sub> of 10 dBm and a <sub>avg</sub> of 15% at 26 GHz. In the n257 and n258 5G New Radio (NR) FR2 bands (24.25 - 29.50GHz), PAEmax and PAE6dB PBO of the PA remain above 32% and 16%, respectively. The amplifier maintains its performance with a VSWR of 1.5:1 with a <sub>max</sub> and <sub>sat</sub> drop of 5% and 0.8 dB, respectively. The PA is implemented in a 28nm FD-SOI CMOS process and only occupies 0.30mm2.
dc.language.isoENen_US
dc.subjectPower measuremen
dc.subject5G mobile communication
dc.subjectMicroprocessors
dc.subjectPower amplifiers
dc.subjectComputer architecture
dc.subjectPeak to average power ratio
dc.subjectNew Radio
dc.subjectIntegrated circuit
dc.subjectPower amplifier
dc.subject5G
dc.subjectCMOS
dc.subject28nm FD-SOI
dc.subjectCapacitive stabilisation
dc.title.enA 24-31GHz 28nm FD-SOI CMOS Power Amplifier Supporting 5G NR FR2 64-QAM Signals
dc.typeCommunication dans un congrèsen_US
dc.identifier.doi10.1109/ICECS202256217.2022.9970929en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.page1-4en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)en_US
bordeaux.countrygben_US
bordeaux.title.proceeding2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)en_US
bordeaux.teamCIRCUIT DESIGN-CSHen_US
bordeaux.conference.cityGlasgowen_US
hal.invitedouien_US
hal.proceedingsouien_US
hal.conference.end2022-10-26
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exportfalse
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&amp;rft_val_fmt=info:ofi/fmt:kev:mtx:journal&amp;rft.date=2022-10&amp;rft.spage=1-4&amp;rft.epage=1-4&amp;rft.eissn=2473-2001&amp;rft.issn=2473-2001&amp;rft.au=DIVERREZ,%20Gwennael&amp;KERHERVE,%20Eric&amp;CATHELIN,%20Andreia&amp;rft.genre=unknown


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