Influence of Si4+ and Ga3+ doped in the BiSiGaVOx system on the structure and ionic conductivity
| hal.structure.identifier | Université Cadi Ayyad [Marrakech] [UCA] | |
| dc.contributor.author | AGNAOU, Abdelmajid | |
| hal.structure.identifier | Université Cadi Ayyad [Marrakech] [UCA] | |
| dc.contributor.author | MHAIRA, Wafaa | |
| hal.structure.identifier | Université Cadi Ayyad [Marrakech] [UCA] | |
| dc.contributor.author | ESSALIM, Rachida | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | MAUVY, Fabrice | |
| hal.structure.identifier | Université Cadi Ayyad [Marrakech] [UCA] | |
| dc.contributor.author | ALGA, Maati | |
| hal.structure.identifier | Université Cadi Ayyad [Marrakech] [UCA] | |
| dc.contributor.author | ZAMAMA, Mohamed | |
| hal.structure.identifier | Université Cadi Ayyad [Marrakech] [UCA] | |
| dc.contributor.author | AMMAR, Abdelaziz | |
| dc.date.accessioned | 2024-02-24T03:13:04Z | |
| dc.date.available | 2024-02-24T03:13:04Z | |
| dc.date.issued | 2024 | |
| dc.identifier.issn | 1876-990X | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/188344 | |
| dc.description.abstractEn | In the present work, the Si and Ga co-doped the Bi4V2O11 compound, i.e., the Bi4V2-xGax/2Six/2O11-3x/4 system (0.1 ≤ x ≤ 0.9) was studied. Structural analysis by XRD reveals that the ordered α-monoclinic phase is synthesized for x ≤ 0.1. The less ordered β-orthorhombic phase was observed in the compositional range of 0.2 ≤ x ≤ 0.3, while the disordered γ-tetragonal phase was obtained over a wide compositional range of 0.4 ≤ x ≤ 0.8. The conductivity of the solid solution Bi4V2-xGax/2Six/2O11-3x/4, with x = 0.2, is promising at 500°C, reaching 1.1 × 10–1 S.cm−1. | |
| dc.language.iso | en | |
| dc.publisher | Springer | |
| dc.subject.en | Solid solution | |
| dc.subject.en | BiCuSbVOx | |
| dc.subject.en | XRD | |
| dc.subject.en | FT-IR | |
| dc.subject.en | Optical properties | |
| dc.subject.en | Ionic conductivity | |
| dc.subject.en | BiSiGaVOx XRD FTIR ionic conductivity | |
| dc.subject.en | BiSiGaVOx | |
| dc.subject.en | FTIR | |
| dc.subject.en | ionic conductivity | |
| dc.title.en | Influence of Si4+ and Ga3+ doped in the BiSiGaVOx system on the structure and ionic conductivity | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1007/s12633-023-02759-y | |
| dc.subject.hal | Chimie/Matériaux | |
| dc.subject.hal | Chimie/Chimie inorganique | |
| bordeaux.journal | Silicon | |
| bordeaux.page | 1283-1290 | |
| bordeaux.volume | 16 | |
| bordeaux.hal.laboratories | Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB) - UMR 5026 | * |
| bordeaux.issue | 3 | |
| bordeaux.institution | Université de Bordeaux | |
| bordeaux.institution | Bordeaux INP | |
| bordeaux.institution | CNRS | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-04475607 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-04475607v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Silicon&rft.date=2024&rft.volume=16&rft.issue=3&rft.spage=1283-1290&rft.epage=1283-1290&rft.eissn=1876-990X&rft.issn=1876-990X&rft.au=AGNAOU,%20Abdelmajid&MHAIRA,%20Wafaa&ESSALIM,%20Rachida&MAUVY,%20Fabrice&ALGA,%20Maati&rft.genre=article |
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