AGNAOU, Abdelmajid; MHAIRA, Wafaa; ESSALIM, Rachida; MAUVY, Fabrice; ALGA, Maati; ZAMAMA, Mohamed; AMMAR, Abdelaziz

doi:10.1007/s12633-023-02759-y

Metadatos

Mostrar el registro completo del ítem

Licencia de uso del documento

AGNAOU, Abdelmajid
Université Cadi Ayyad [Marrakech] [UCA]

MHAIRA, Wafaa
Université Cadi Ayyad [Marrakech] [UCA]

ESSALIM, Rachida
Université Cadi Ayyad [Marrakech] [UCA]

Idioma

Article de revue

Este ítem está publicado en

Silicon. 2024, vol. 16, n° 3, p. 1283-1290

Springer

Resumen en inglés

In the present work, the Si and Ga co-doped the Bi4V2O11 compound, i.e., the Bi4V2-xGax/2Six/2O11-3x/4 system (0.1 ≤ x ≤ 0.9) was studied. Structural analysis by XRD reveals that the ordered α-monoclinic phase is synthesized for x ≤ 0.1. The less ordered β-orthorhombic phase was observed in the compositional range of 0.2 ≤ x ≤ 0.3, while the disordered γ-tetragonal phase was obtained over a wide compositional range of 0.4 ≤ x ≤ 0.8. The conductivity of the solid solution Bi4V2-xGax/2Six/2O11-3x/4, with x = 0.2, is promising at 500°C, reaching 1.1 × 10–1 S.cm−1.< Leer menos

Palabras clave en inglés

Solid solution

BiCuSbVOx

XRD

FT-IR

Optical properties

Ionic conductivity

BiSiGaVOx XRD FTIR ionic conductivity

BiSiGaVOx

FTIR

ionic conductivity

Metadatos

Compartir este ítem

Licencia de uso del documento

Influence of Si4+ and Ga3+ doped in the BiSiGaVOx system on the structure and ionic conductivity

Idioma

Este ítem está publicado en

Resumen en inglés

Palabras clave en inglés

URI

DOI

Orígen

Centros de investigación