Design of a 37-40GHz bidirectional amplifier for 5G FR2 radio beamforming systems in 22nm CMOS FD-SOI
dc.rights.license | open | en_US |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
hal.structure.identifier | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI] | |
dc.contributor.author | PAQUIEN, Lucien | |
hal.structure.identifier | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI] | |
dc.contributor.author | MARTINEAU, Baudouin | |
hal.structure.identifier | STMicroelectronics [Crolles] [ST-CROLLES] | |
dc.contributor.author | BELOT, Didier | |
hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
dc.contributor.author | DELTIMPLE, Nathalie
IDREF: 102460280 | |
dc.date.accessioned | 2024-02-06T09:40:12Z | |
dc.date.available | 2024-02-06T09:40:12Z | |
dc.date.issued | 2024-01-10 | |
dc.date.conference | 2023-12-04 | |
dc.identifier.issn | 1803-7232 | en_US |
dc.identifier.uri | oai:crossref.org:10.1109/icecs58634.2023.10382936 | |
dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/187880 | |
dc.description.abstract | This paper presents the operation of a bidirectional amplifier (PA-LNA) for digital beamforming (DBF) radio systems within the 5G FR2-1 n260 frequency band ranging from 37GHz to 40GHz, using the GlobalFoundries 22nm CMOS FD-SOI technology. This amplifier is intended to be integrated into a complete bidirectional transceiver. The PA-LNA consists of a transformer-based differential architecture and interconnected differential pairs using NMOS and PMOS transistors both enabled using tale transistors. This solution eliminates the need for lossy TRX SPDT (Single Pole Double Throw) switches, conventionally used to address alternatively the PA or the LNA in order to operate in time division duplexing (TDD). In this design, matching networks are reused leading to a strong required area reduction, close to a factor of two, compared with conventional architectures. The proposed PA-LNA achieves a small signal gain of 14.4dB in PA mode and 23.8dB in LNA mode. In PA mode, it achieves a saturated output power (Psat) of 7.5dBm and a 7.1dBm OCP1 consuming a static DC power of 11.6mW with a 27.4% power added efficiency (PAE) at OCP1, while the LNA mode achieves a noise figure (NF) of 4.6dB consuming a DC power of 21mW. The core area of the amplifier is only 0.11mm2. | |
dc.language.iso | EN | en_US |
dc.publisher | IEEE | en_US |
dc.source | crossref | |
dc.subject | MOSFET | |
dc.subject | Noise figure | |
dc.subject | Array signal processing | |
dc.subject | 5G mobile communication | |
dc.subject | Power amplifiers | |
dc.subject | Silicon | |
dc.subject | Transceivers | |
dc.subject | Wireless Systems | |
dc.subject | 22nm FDSOI | |
dc.subject | Bi-directional Amplifier | |
dc.subject | Output Power | |
dc.subject | DC Power | |
dc.subject | Small Gain | |
dc.subject | Matching Network | |
dc.subject | Low-noise Amplifier | |
dc.subject | Noise Figure | |
dc.subject | Conventional Architecture | |
dc.subject | Saturation Power | |
dc.subject | Time Division Duplex | |
dc.subject | Digital Beamforming | |
dc.subject | Differential Pair | |
dc.subject | Power Consumption | |
dc.subject | Charge Carriers | |
dc.subject | High Gain | |
dc.subject | Gate Electrode | |
dc.subject | Silicon Area | |
dc.subject | Passive Elements | |
dc.subject | CMOS | |
dc.subject | Beamforming | |
dc.subject | 5G | |
dc.subject | LNA | |
dc.subject | PA | |
dc.subject | Bidirectional | |
dc.subject | MmW | |
dc.subject | Transceiver | |
dc.title.en | Design of a 37-40GHz bidirectional amplifier for 5G FR2 radio beamforming systems in 22nm CMOS FD-SOI | |
dc.type | Communication dans un congrès | en_US |
dc.identifier.doi | 10.1109/icecs58634.2023.10382936 | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
bordeaux.page | 1-4 | en_US |
bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
bordeaux.institution | Université de Bordeaux | en_US |
bordeaux.institution | Bordeaux INP | en_US |
bordeaux.institution | CNRS | en_US |
bordeaux.conference.title | 2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS) | en_US |
bordeaux.country | tr | en_US |
bordeaux.title.proceeding | 2023 30th IEEE International Conference on Electronics, Circuits and Systems (ICECS) | en_US |
bordeaux.team | CIRCUIT DESIGN | en_US |
bordeaux.conference.city | Istanbul | en_US |
bordeaux.import.source | dissemin | |
hal.identifier | hal-04440770 | |
hal.version | 1 | |
hal.date.transferred | 2024-02-06T09:40:16Z | |
hal.invited | oui | en_US |
hal.proceedings | oui | en_US |
hal.conference.end | 2023-12-07 | |
hal.popular | non | en_US |
hal.audience | Internationale | en_US |
hal.export | true | |
workflow.import.source | dissemin | |
dc.rights.cc | Pas de Licence CC | en_US |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2024-01-10&rft.spage=1-4&rft.epage=1-4&rft.eissn=1803-7232&rft.issn=1803-7232&rft.au=PAQUIEN,%20Lucien&MARTINEAU,%20Baudouin&BELOT,%20Didier&DELTIMPLE,%20Nathalie&rft.genre=unknown |
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