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hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorMHAIRA, Wafaa
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorAGNAOU, Abdelmajid
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorESSALIM, Rachida
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAUVY, Fabrice
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorZAMAMA, Mohamed
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorALGA, Maati
hal.structure.identifierLaboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP]
dc.contributor.authorAMMAR, Abdelaziz
dc.date.issued2023
dc.identifier.issn0272-8842
dc.description.abstractEnThe partial substitution of copper by antimony in Bi4V1.8Cu0.2O10.7 compounds leds to the solid solution Bi4V1.8Cu0.2-xSbxO10.7+3x/2 (0.00 ≤ x ≤ 0.20). X-ray diffraction and thermal analysis showed that for all compositions, the obtained phases are isotype to the tetragonal γ or γ′ form of Bi4V2O11. The effect of Sb5+ doping on electrical conductivity was studied using electrochemical impedance spectroscopy in the temperature range 200–700 °C. The changes in slope observed in the Arrhenius plots correspond to the structural transitions that occur within the material. The band gap was determined by DRS spectra, BiCuSbVOx materials have a very low gap band (1.77–1.80 eV) compared to parent phase Bi4V2O11 and the most of BIMEVOX semiconductor materials. The band located around 860 cm−1 in Raman spectroscopy is attributed to V–O bond and more especially to V–O2 bond.
dc.language.isoen
dc.publisherElsevier
dc.subject.enBiCuSbVOx
dc.subject.enXRD
dc.subject.enFT-IR
dc.subject.enOptical properties
dc.subject.enIonic conductivity
dc.title.enHigh-conducting Bi4V1.8Cu0.2-xSbxO10.7+3x/2 ceramics: Structural, microstructural, electrical and optical properties
dc.typeArticle de revue
dc.identifier.doi10.1016/j.ceramint.2023.09.264
dc.subject.halChimie/Matériaux
bordeaux.journalCeramics International
bordeaux.page39205-39213
bordeaux.volume49
bordeaux.issue23, Part B
bordeaux.peerReviewedoui
hal.identifierhal-04237809
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04237809v1
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