High-conducting Bi4V1.8Cu0.2-xSbxO10.7+3x/2 ceramics: Structural, microstructural, electrical and optical properties
hal.structure.identifier | Laboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP] | |
dc.contributor.author | MHAIRA, Wafaa | |
hal.structure.identifier | Laboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP] | |
dc.contributor.author | AGNAOU, Abdelmajid | |
hal.structure.identifier | Laboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP] | |
dc.contributor.author | ESSALIM, Rachida | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | MAUVY, Fabrice | |
hal.structure.identifier | Laboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP] | |
dc.contributor.author | ZAMAMA, Mohamed | |
hal.structure.identifier | Laboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP] | |
dc.contributor.author | ALGA, Maati | |
hal.structure.identifier | Laboratoire des Sciences des Matériaux et Optimisation des Procédés [SCIMATOP] | |
dc.contributor.author | AMMAR, Abdelaziz | |
dc.date.issued | 2023 | |
dc.identifier.issn | 0272-8842 | |
dc.description.abstractEn | The partial substitution of copper by antimony in Bi4V1.8Cu0.2O10.7 compounds leds to the solid solution Bi4V1.8Cu0.2-xSbxO10.7+3x/2 (0.00 ≤ x ≤ 0.20). X-ray diffraction and thermal analysis showed that for all compositions, the obtained phases are isotype to the tetragonal γ or γ′ form of Bi4V2O11. The effect of Sb5+ doping on electrical conductivity was studied using electrochemical impedance spectroscopy in the temperature range 200–700 °C. The changes in slope observed in the Arrhenius plots correspond to the structural transitions that occur within the material. The band gap was determined by DRS spectra, BiCuSbVOx materials have a very low gap band (1.77–1.80 eV) compared to parent phase Bi4V2O11 and the most of BIMEVOX semiconductor materials. The band located around 860 cm−1 in Raman spectroscopy is attributed to V–O bond and more especially to V–O2 bond. | |
dc.language.iso | en | |
dc.publisher | Elsevier | |
dc.subject.en | BiCuSbVOx | |
dc.subject.en | XRD | |
dc.subject.en | FT-IR | |
dc.subject.en | Optical properties | |
dc.subject.en | Ionic conductivity | |
dc.title.en | High-conducting Bi4V1.8Cu0.2-xSbxO10.7+3x/2 ceramics: Structural, microstructural, electrical and optical properties | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1016/j.ceramint.2023.09.264 | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | Ceramics International | |
bordeaux.page | 39205-39213 | |
bordeaux.volume | 49 | |
bordeaux.issue | 23, Part B | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-04237809 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-04237809v1 | |
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