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Understanding the formation mechanisms of silicon particles from the thermal disproportionation of hydrogen silsesquioxane

hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCIBAKA-NDAYA, Cynthia
hal.structure.identifierUniversity of Alberta
dc.contributor.authorO'CONNOR, Kevin
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorIDOWU, Emmanuel
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPARKER, Megan
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLEBRAUD, Éric
hal.structure.identifierBordeaux Imaging Center [BIC]
dc.contributor.authorLACOMME, Sabrina
hal.structure.identifierFédération de Chimie et Matériaux de Paris-Centre [FCMat]
dc.contributor.authorMONTERO, David
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSANZ CAMACHO, Paula
hal.structure.identifierUniversity of Alberta
dc.contributor.authorVEINOT, Jonathan
hal.structure.identifierMatériaux, ingénierie et science [Villeurbanne] [MATEIS]
dc.contributor.authorROIBAN, Ioan-Lucian
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDRISKO, Glenna
dc.date.issued2023
dc.identifier.issn0897-4756
dc.description.abstractEnCrystalline silicon particles sustaining Mie resonances are readily obtained from the thermal processing of hydrogen silsesquioxane (HSQ). Here, the mechanisms involved in silicon particle formation and growth from HSQ are investigated through real time in situ analysis in an environmental transmission electron microscope and X-ray diffractometer. The nucleation of Si nanodomains are observed starting around 1000 °C. For the first time, a highly mobile intermediate phase is experimentally observed, thus demonstrating a previously unknown growth mechanism. At least two growth processes occur simultaneously: the coalescence of small particles into larger particles and a growth mode by particle displacement through the matrix toward the HSQ grain surface. Post-synthetic characterization by scanning electron microscopy further evidences the latter growth mechanism. The gaseous environment employed during synthesis impacts particle formation and growth under both in situ and ex situ conditions, impacting particle yield and structural homogeneity. Understanding the formation mechanisms of particles provides promising pathways for reducing the energy cost of this synthetic route.
dc.description.sponsorshipDéveloppement d'une infrastructure française distribuée coordonnée - ANR-10-INBS-0004
dc.language.isoen
dc.publisherAmerican Chemical Society
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/
dc.subject.enCrystallization
dc.subject.enMetal oxide nanoparticles
dc.subject.enNanoparticles
dc.subject.enSemiconducting nanostructured materials
dc.subject.enSilicon
dc.title.enUnderstanding the formation mechanisms of silicon particles from the thermal disproportionation of hydrogen silsesquioxane
dc.typeArticle de revue
dc.identifier.doi10.1021/acs.chemmater.3c01448
dc.subject.halChimie/Matériaux
dc.description.sponsorshipEuropeBottom-up fabrication of nanostructured silicon-based materials with unprecedented optical properties
bordeaux.journalChemistry of Materials
bordeaux.page8551–8560
bordeaux.volume35
bordeaux.issue20
bordeaux.peerReviewedoui
hal.identifierhal-04211253
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04211253v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Chemistry%20of%20Materials&rft.date=2023&rft.volume=35&rft.issue=20&rft.spage=8551%E2%80%938560&rft.epage=8551%E2%80%938560&rft.eissn=0897-4756&rft.issn=0897-4756&rft.au=CIBAKA-NDAYA,%20Cynthia&O'CONNOR,%20Kevin&IDOWU,%20Emmanuel&PARKER,%20Megan&LEBRAUD,%20%C3%89ric&rft.genre=article


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