A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | BRENDLER, Leonardo H. | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | LAPUYADE, Herve
IDREF: 120393336 | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DEVAL, Yann | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DARRACQ, Frederic
IDREF: 074585487 | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | FAUQUET, Frederic | |
| dc.contributor.author | REIS, Ricardo | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | RIVET, Francois
IDREF: 135485576 | |
| dc.date.accessioned | 2023-10-17T08:21:00Z | |
| dc.date.available | 2023-10-17T08:21:00Z | |
| dc.date.issued | 2023-09-13 | |
| dc.identifier.issn | 1549-8328 | en_US |
| dc.identifier.uri | oai:crossref.org:10.1109/tcsi.2023.3310876 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/184443 | |
| dc.description.abstractEn | This work details a new way to deal with the Multiple-Cell Upsets (MCU) in SRAM memories for space applications. The method consists of spatially interleaving a memory plan with a network of memory radiation detectors. As a proof-of-concept, a prototype circuit composed of the radiation detectors was manufactured in the 350 nm CMOS Process Technology and tested considering two methodologies: electrically-induced SEU/MCU testing and SEE laser testing. Silicon measurement results confirm the correct operation of the circuit, detecting single and multiple events inserted in different positions of the evaluated detection plans. According to the ratio between the number of data and detection cells, the method proposed can provide a probability of detecting MCUs in a memory plan that can reach close to 100%. | |
| dc.language.iso | EN | en_US |
| dc.source | crossref | |
| dc.subject | Random access memory | |
| dc.subject | Transistors | |
| dc.subject | Power demand | |
| dc.subject | Logic gates | |
| dc.subject | Radiation effects | |
| dc.subject | Prototypes | |
| dc.subject | MOS devices | |
| dc.subject.en | Detection cell | |
| dc.subject.en | Multiple-cell upsets | |
| dc.subject.en | Radiation hardening | |
| dc.subject.en | Single-event upsets | |
| dc.subject.en | SRAM | |
| dc.title.en | A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1109/tcsi.2023.3310876 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
| bordeaux.journal | IEEE Transactions on Circuits and Systems I: Regular Papers | en_US |
| bordeaux.page | 1-11 | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.team | CONCEPTION-CAS | en_US |
| bordeaux.team | NANOELECTRONIQUE-LASER | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| bordeaux.import.source | dissemin | |
| hal.identifier | hal-04245512 | |
| hal.version | 1 | |
| hal.date.transferred | 2023-10-17T08:21:01Z | |
| hal.popular | non | en_US |
| hal.audience | Internationale | en_US |
| hal.export | true | |
| workflow.import.source | dissemin | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.subtype | Article de synthèse | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE%20Transactions%20on%20Circuits%20and%20Systems%20I:%20Regular%20Papers&rft.date=2023-09-13&rft.spage=1-11&rft.epage=1-11&rft.eissn=1549-8328&rft.issn=1549-8328&rft.au=BRENDLER,%20Leonardo%20H.&LAPUYADE,%20Herve&DEVAL,%20Yann&DARRACQ,%20Frederic&FAUQUET,%20Frederic&rft.genre=article |
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