A Design Technique for Power Constrained CMOS Low-Noise Amplifier Dedicated to Wireless Sensor Networks
dc.rights.license | open | en_US |
hal.structure.identifier | ESTIA INSTITUTE OF TECHNOLOGY | |
dc.contributor.author | TERRASSON, Guillaume
ORCID: 0000-0002-3468-5883 IDREF: 136426158 | |
hal.structure.identifier | ESTIA INSTITUTE OF TECHNOLOGY | |
dc.contributor.author | BRIAND, Renaud
IDREF: 60598379 | |
dc.contributor.author | BASROUR, Skandar | |
dc.date.accessioned | 2023-09-04T10:05:00Z | |
dc.date.available | 2023-09-04T10:05:00Z | |
dc.date.issued | 2009 | |
dc.identifier.issn | 1546-1998 | en_US |
dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/183585 | |
dc.description.abstractEn | n wireless sensor network applications, autonomy is a critical feature. So, a new design method under power consumption constraint, dedicated to inductively degenerated Low-Noise Amplifier, is proposed in this article. A detailed analysis of power consumption, gain, noise and linearity performances of this topology is performed. The simulation results using MATLAB show the impact of each MOSFET dimensions into Low-Noise Amplifier performances. Based on these results, a new method to design Low-Noise Amplifier is proposed using an example. A 868-MHz Low-Noise Amplifier is then designed in CMOS 0.35 μm technology to validate our method. Considering the literature, measurement results show good characteristics: 13 dB gain, 1.5 dB Noise Figure with an ultra low-power consumption of 6.7 mW at supply voltage of 2 V. | |
dc.language.iso | EN | en_US |
dc.subject.en | wireless sensor network | |
dc.subject.en | CMOS | |
dc.title.en | A Design Technique for Power Constrained CMOS Low-Noise Amplifier Dedicated to Wireless Sensor Networks | |
dc.title.alternative | JOLPE | en_US |
dc.type | Article de revue | en_US |
dc.identifier.doi | 10.1166/jolpe.2009.1020 | en_US |
dc.subject.hal | Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique | en_US |
bordeaux.journal | Journal of Low Power Electronics | en_US |
bordeaux.page | 196-205 | en_US |
bordeaux.volume | 5 | en_US |
bordeaux.hal.laboratories | ESTIA - Recherche | en_US |
bordeaux.issue | 2 | en_US |
bordeaux.institution | Université de Bordeaux | en_US |
bordeaux.institution | Bordeaux INP | en_US |
bordeaux.institution | Bordeaux Sciences Agro | en_US |
bordeaux.peerReviewed | oui | en_US |
bordeaux.inpress | non | en_US |
bordeaux.import.source | hal | |
hal.identifier | hal-00422325 | |
hal.version | 1 | |
hal.popular | non | en_US |
hal.audience | Internationale | en_US |
hal.export | false | |
workflow.import.source | hal | |
dc.rights.cc | Pas de Licence CC | en_US |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Low%20Power%20Electronics&rft.date=2009&rft.volume=5&rft.issue=2&rft.spage=196-205&rft.epage=196-205&rft.eissn=1546-1998&rft.issn=1546-1998&rft.au=TERRASSON,%20Guillaume&BRIAND,%20Renaud&BASROUR,%20Skandar&rft.genre=article |
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