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Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature

hal.structure.identifierLEM, UMR 104, CNRS-ONERA, Université Paris Saclay [Laboratoire d'étude des microstructures]
hal.structure.identifierGroupe d'Etude de la Matière Condensée [GEMAC]
hal.structure.identifierDMAS, ONERA, Université Paris Saclay [Châtillon]
dc.contributor.authorCARRÉ, E
hal.structure.identifierLEM, UMR 104, CNRS-ONERA, Université Paris Saclay [Laboratoire d'étude des microstructures]
hal.structure.identifierDMAS, ONERA, Université Paris Saclay [Châtillon]
dc.contributor.authorSPONZA, L
hal.structure.identifierGroupe d'Etude de la Matière Condensée [GEMAC]
dc.contributor.authorLUSSON, A
hal.structure.identifierGroupe d'Etude de la Matière Condensée [GEMAC]
dc.contributor.authorSTENGER, I
hal.structure.identifierLaboratoire Photonique, Numérique et Nanosciences [LP2N]
dc.contributor.authorGAUFRÈS, Étienne
hal.structure.identifierLEM, UMR 104, CNRS-ONERA, Université Paris Saclay [Laboratoire d'étude des microstructures]
hal.structure.identifierDMAS, ONERA, Université Paris Saclay [Châtillon]
dc.contributor.authorLOISEAU, A
hal.structure.identifierGroupe d'Etude de la Matière Condensée [GEMAC]
dc.contributor.authorBARJON, J
dc.date.accessioned2023-05-12T10:37:23Z
dc.date.available2023-05-12T10:37:23Z
dc.date.issued2021-04
dc.identifier.issn2053-1583
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/181537
dc.description.abstractEnAtomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high temperature is found with a much smaller activation energy, attributed to the localization of free excitons on a shallow impurity. This analysis leads us to attribute respectively the 0.276 eV and 0.278 eV PL lines to bound excitons and free excitons in BP. As a result, the value of bulk BP bandgap is refined to 0.287 eV at 2K.
dc.description.sponsorshipElectroluminescence en spin polarisés dans les couches minces de phosphore noir - ANR-17-CE24-0023
dc.language.isoen
dc.publisherIOP Publishing
dc.title.enExcitons in bulk black phosphorus evidenced by photoluminescence at low temperature
dc.typeArticle de revue
dc.identifier.doi10.1088/2053-1583/abca81
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
dc.description.sponsorshipEuropeGraphene Flagship Core Project 2
dc.description.sponsorshipEuropeGraphene Flagship Core Project 3
bordeaux.journal2D Materials
bordeaux.page021001
bordeaux.volume8
bordeaux.hal.laboratoriesLaboratoire Photonique, Numérique et Nanosciences (LP2N) - UMR 5298*
bordeaux.issue2
bordeaux.institutionUniversité de Bordeaux
bordeaux.institutionCNRS
bordeaux.peerReviewedoui
hal.identifierhal-03049496
hal.version1
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-03049496v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=2D%20Materials&rft.date=2021-04&rft.volume=8&rft.issue=2&rft.spage=021001&rft.epage=021001&rft.eissn=2053-1583&rft.issn=2053-1583&rft.au=CARR%C3%89,%20E&SPONZA,%20L&LUSSON,%20A&STENGER,%20I&GAUFR%C3%88S,%20%C3%89tienne&rft.genre=article


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