Development of a high accuracy and stability test bench for ageing measurement of 16 nm FinFETs based FPGA
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | SOBAS, Justin | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | AIRIMITOAIE, Tudor-Bogdan
IDREF: 166440396 | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | MARC, Francois
IDREF: 158656628 | |
| dc.date.accessioned | 2023-03-07T11:29:36Z | |
| dc.date.available | 2023-03-07T11:29:36Z | |
| dc.date.issued | 2022-11-01 | |
| dc.identifier.issn | 0026-2714 | en_US |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/172198 | |
| dc.description.abstractEn | This article describes the development of a test bench so as to measure the ageing of 16 nm FinFETs used in a Zynq UltraScale+ FPGA from Xilinx. The Ring Oscillator (RO) drift measurement method was chosen and implemented in the setup. However, RO is a circuit sensitive not only to ageing but also to temperature and voltage. In order to mitigate the undesired sensitivity to temperature and voltage, we installed a regulation system to control the temperature and the internal voltage of the FPGA, and we characterised the RO frequency in function of the temperature and the voltage to apply post-measurement compensations. We improved the measurement circuit by using the GPS signal as a time reference. 1000 h test with (TFPGA = 100∘C) and (VFPGA = Vnom + 25%) was performed and results show clear RO frequency drifts lower than 0.1 % measured with an accuracy of 0.9 × 10−4. | |
| dc.language.iso | EN | en_US |
| dc.title.en | Development of a high accuracy and stability test bench for ageing measurement of 16 nm FinFETs based FPGA | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1016/j.microrel.2022.114698 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics] | en_US |
| bordeaux.journal | Microelectronics Reliability | en_US |
| bordeaux.page | 114698 | en_US |
| bordeaux.volume | 138 | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.team | CONCEPTION-M4C | en_US |
| bordeaux.team | AUTOMATIQUE-FFTG | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| hal.identifier | hal-04017664 | |
| hal.version | 1 | |
| hal.date.transferred | 2023-03-07T11:29:44Z | |
| hal.export | true | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Microelectronics%20Reliability&rft.date=2022-11-01&rft.volume=138&rft.spage=114698&rft.epage=114698&rft.eissn=0026-2714&rft.issn=0026-2714&rft.au=SOBAS,%20Justin&AIRIMITOAIE,%20Tudor-Bogdan&MARC,%20Francois&rft.genre=article |
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