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hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorDILHAIRE, S.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorPHAN, T.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorSCHAUB, E.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorCLAEYS, W.
dc.date.issued1997-10
dc.identifier.issn0026-2714
dc.description.abstractEnA high sensitivity and high resolution laser probe devoted to the thermomechanical studies of microelectronic interconnects has been developed. Surface displacements as low as 0.1 picometer (10−13m) can be observed, this allows the laser probe to investigate the edge effect in interconnects. The stress field induced by the edge forces in the underlying silicon dioxide layers has been observed. All measurements are performed with a micrometric lateral resolution.
dc.language.isoen
dc.publisherElsevier
dc.title.enHigh sensitivity and high resolution differential interferometer: Micrometric polariscope for thermomechanical studies in microelectronics
dc.typeArticle de revue
dc.identifier.doi10.1016/S0026-2714(97)00116-9
dc.subject.halPhysique [physics]
bordeaux.journalMicroelectronics Reliability
bordeaux.page1587-1590
bordeaux.volume37
bordeaux.issue10-11
bordeaux.peerReviewedoui
hal.identifierhal-01550179
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01550179v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Microelectronics%20Reliability&rft.date=1997-10&rft.volume=37&rft.issue=10-11&rft.spage=1587-1590&rft.epage=1587-1590&rft.eissn=0026-2714&rft.issn=0026-2714&rft.au=DILHAIRE,%20S.&PHAN,%20T.&SCHAUB,%20E.&CLAEYS,%20W.&rft.genre=article


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