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Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters

hal.structure.identifierLaboratoire d'Etude des Matériaux et des Composants pour l'Electronique [LEMCEL]
dc.contributor.authorVÉLU, Gabriel
hal.structure.identifierLaboratoire d'Etude des Matériaux et des Composants pour l'Electronique [LEMCEL]
dc.contributor.authorHOUZET, Gregory
hal.structure.identifierLaboratoire d'Etude des Matériaux et des Composants pour l'Electronique [LEMCEL]
dc.contributor.authorBURGNIES, Ludovic
hal.structure.identifierLaboratoire d'Etude des Matériaux et des Composants pour l'Electronique [LEMCEL]
dc.contributor.authorCARRU, Jean-Claude
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorMARTEAU, Aurélien
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorBLARY, Karine
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorLIPPENS, Didier
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorMOUNAIX, Patrick
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorTONDUSSON, Marc
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorNGUEMA AGNANDJI, Edwin
dc.date.issued2007
dc.identifier.issn0015-0193
dc.description.abstractEnBST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the existence of a Debye relaxation mode is postulated. Varactors made with these BST films show a decrease of their capacitance by a factor of about 1.7 under 40 volts of bias. Phaseshifters have been realized with these varactors: a bias of 40 volts at 30 GHz permits to obtain a phaseshift of 360 degrees.
dc.language.isoen
dc.publisherTaylor & Francis: STM, Behavioural Science and Public Health Titles
dc.subject.enThin films
dc.subject.enBaSrTiO3
dc.subject.enelectrical properties
dc.subject.enterahertz
dc.subject.enmicrowave
dc.subject.enphaseshifters
dc.title.enElectrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters
dc.typeArticle de revue
dc.identifier.doi10.1080/00150190701367036
dc.subject.halSciences de l'ingénieur [physics]
bordeaux.journalFerroelectrics
bordeaux.page29-37
bordeaux.volume353
bordeaux.peerReviewedoui
hal.identifierhal-00285626
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00285626v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Ferroelectrics&rft.date=2007&rft.volume=353&rft.spage=29-37&rft.epage=29-37&rft.eissn=0015-0193&rft.issn=0015-0193&rft.au=V%C3%89LU,%20Gabriel&HOUZET,%20Gregory&BURGNIES,%20Ludovic&CARRU,%20Jean-Claude&MARTEAU,%20Aur%C3%A9lien&rft.genre=article


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