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Exaltation de la réponse THz ultra-rapide induite optiquement dans une hétérostructure de MoSe2MoS2

hal.structure.identifierSungkyunkwan University [Suwon] [SKKU]
dc.contributor.authorSEOK, Joon
hal.structure.identifierSungkyunkwan University [Suwon] [SKKU]
dc.contributor.authorYOUNG, Hee
hal.structure.identifierDepartment of Physics [New Delhi] [IIT]
dc.contributor.authorKUMAR, Sunil
hal.structure.identifierDepartment of Physics [New Delhi] [IIT]
dc.contributor.authorSINGH, Arvind
hal.structure.identifierDepartment of Physics [New Delhi] [IIT]
dc.contributor.authorNIVEDAN, Anand
hal.structure.identifierDepartment of Physics [New Delhi] [IIT]
dc.contributor.authorKUMAR, Sandeep
dc.contributor.authorTONDUSSON, Marc
dc.contributor.authorDEGERT, Jérôme
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorOBERLÉ, Jean
hal.structure.identifierSungkyunkwan University [Suwon] [SKKU]
dc.contributor.authorYUN, Seok Joon
hal.structure.identifierSungkyunkwan University [Suwon] [SKKU]
dc.contributor.authorLEE, Young Hee
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorFREYSZ, Eric
dc.date2021
dc.date.issued2021
dc.identifier.issn1094-4087
dc.description.abstractEnTHz conductivity of large area MoS2 and MoSe2 monolayers as well as their vertical heterostructure, MoSe2MoS2 is measured in the 0.3-5 THz frequency range. Compared to the monolayers, the ultrafast THz reflectivity of the MoSe2MoS2 heterobilayer is enhanced many folds when optically excited above the direct band gap energies of the constituting monolayers. The free carriers generated in the heterobilayer evolve with the characteristic times found in each of the two monolayers. Surprisingly, the same enhancement is recorded in the ultrafst THz reflectivity of the heterobilayer when excited below the MoS2 bandgap energy. A mechanism accounting for these observations is proposed.
dc.language.isoen
dc.publisherOptical Society of America - OSA Publishing
dc.subject.enTHz
dc.subject.en2D semiconducting material
dc.subject.enUltrafast charges transfert
dc.subject.enEnhanced conductivity
dc.titleExaltation de la réponse THz ultra-rapide induite optiquement dans une hétérostructure de MoSe2MoS2
dc.title.enEnhancement and optical control of ultrafast THz conductivity in MoSe2MoS2 vertical heterostructure
dc.typeArticle de revue
dc.identifier.doi10.1364/OE.412548
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
dc.subject.halChimie/Matériaux
bordeaux.journalOptics Express
bordeaux.peerReviewedoui
hal.identifierhal-03095040
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-03095040v1
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