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hal.structure.identifierInstitute of Physics
dc.contributor.authorNĚMEC, H.
hal.structure.identifierInstitute of Physics
dc.contributor.authorFEKETE, L.
hal.structure.identifierInstitute of Physics
dc.contributor.authorKADLEC, F.
hal.structure.identifierInstitute of Physics
dc.contributor.authorKUŽEL, P.
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorMARTIN, M.
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorMANGENEY, J.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorDELAGNES, J. C.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorMOUNAIX, P.
dc.date.created2008-09-15
dc.date.issued2008-12
dc.identifier.issn1098-0121
dc.description.abstractEnUltrafast dynamics of charge carriers in Br+ -bombarded InP were studied using time-resolved terahertz spectroscopy. Carrier lifetimes and mobilities in various samples prepared with irradiation doses spanning from 109 up to 1012cm-2 were determined. The lifetime of photoexcited carriers appears to be determined primarily by the density of defects resulting from host-atom displacements while it is not significantly influenced by the Br-atom implantation. In the most irradiated sample, a carrier lifetime as short as 300 fs was found. All samples exhibit a high mobility (3000-900cm2V-1s-1) ; the lower values correspond to a smaller irradiation dose. In selected samples, the density of traps along with electron and hole lifetimes was determined.
dc.language.isoen
dc.publisherAmerican Physical Society
dc.title.enUltrafast carrier dynamics in Br+ -bombarded InP studied by time-resolved terahertz spectroscopy
dc.typeArticle de revue
dc.identifier.doi10.1103/PHYSREVB.78.235206
dc.subject.halPhysique [physics]/Physique [physics]/Optique [physics.optics]
bordeaux.journalPhysical Review B: Condensed Matter and Materials Physics (1998-2015)
bordeaux.page235206 (1-7)
bordeaux.volume78
bordeaux.issue23
bordeaux.peerReviewedoui
hal.identifierhal-00762666
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00762666v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical%20Review%20B:%20Condensed%20Matter%20and%20Materials%20Physics%20(1998-2015)&rft.date=2008-12&rft.volume=78&rft.issue=23&rft.spage=235206%20(1-7)&rft.epage=235206%20(1-7)&rft.eissn=1098-0121&rft.issn=1098-0121&rft.au=N%C4%9AMEC,%20H.&FEKETE,%20L.&KADLEC,%20F.&KU%C5%BDEL,%20P.&MARTIN,%20M.&rft.genre=article


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