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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGUILLEMET, Thomas
hal.structure.identifierTransferts, écoulements, fluides, énergétique [TREFLE]
dc.contributor.authorKUSIAK, Andrzej
dc.contributor.authorFAN, Lisha
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorHEINTZ, Jean-Marc
hal.structure.identifierDepartment of Mechanical and Materials Engineering
dc.contributor.authorCHANDRA, Namas
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorZHOU, Yunshen
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSILVAIN, Jean-François
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorLU, Yongfeng
hal.structure.identifierTransferts, écoulements, fluides, énergétique [TREFLE]
dc.contributor.authorBATTAGLIA, Jean-Luc
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorLU YONG, Feng
dc.date.issued2014-02-12
dc.identifier.issn1944-8244
dc.description.abstractEnDiamond (Dia) films are promising heat-dissipative materials for electronic packages because they combine high thermal conductivity with high electrical resistivity. However, precise knowledge of the thermal properties of the diamond films is crucial to their potential application as passive thermal management substrates in electronics. In this study, modulated photothermal radiometry in a front-face configuration was employed to thermally characterize polycrystalline diamond films deposited onto silicon (Si) substrates through laser-assisted combustion synthesis. The intrinsic thermal conductivity of diamond films and the thermal boundary resistance at the interface between the diamond film and the Si substrate were investigated. The results enlighten the correlation between the deposition process, film purity, film transverse thermal conductivity, and interface thermal resistance.
dc.language.isoen
dc.publisherWashington, D.C. : American Chemical Society
dc.subject.enDiamond films
dc.subject.enLaser-assisted combustion synthesis
dc.subject.enInterface
dc.subject.enHeat conduction
dc.title.enThermal characterization of diamond films through modulated photothermal radiometry.
dc.typeArticle de revue
dc.identifier.doi10.1021/am405188r
dc.subject.halChimie/Matériaux
bordeaux.journalACS Applied Materials & Interfaces
bordeaux.page2095-2102
bordeaux.volume6
bordeaux.issue3
bordeaux.peerReviewedoui
hal.identifierhal-01003811
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01003811v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=ACS%20Applied%20Materials%20&%20Interfaces&rft.date=2014-02-12&rft.volume=6&rft.issue=3&rft.spage=2095-2102&rft.epage=2095-2102&rft.eissn=1944-8244&rft.issn=1944-8244&rft.au=GUILLEMET,%20Thomas&KUSIAK,%20Andrzej&FAN,%20Lisha&HEINTZ,%20Jean-Marc&CHANDRA,%20Namas&rft.genre=article


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