Effect of annealing and of cooling rates on n-GaAs electrode photoelectrochemical characteristics
SAADEDDIN, Iyad
Department of Chemistry
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
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Department of Chemistry
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
SAADEDDIN, Iyad
Department of Chemistry
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
< Réduire
Department of Chemistry
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Langue
en
Article de revue
Ce document a été publié dans
Active and Passive Electronic Components. 2004, vol. 27, n° 2, p. 69-80
Hindawi Publishing Corporation
Résumé en anglais
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs. potential plots were improved by annealing. Cell ...Lire la suite >
The effect of annealing of the n-GaAs semiconductor on its characteristics in photoelectrochemical (PEC) systems has been investigated. The photocurrent densities vs. potential plots were improved by annealing. Cell efficiency and short-circuit current densities were enhanced for the annealed n-GaAs.The effect of the rate of cooling of heated n-GaAs wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed below 600 C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. For n-GaAs, slowly cooled electrodes from temperatures below 600 C showed better photocurrent density vs. potential plots and higher efficiency. n-GaAs samples, quenched from temperatures above 700 C, showed better photocurrent density vs. potential plots and higher efficiency than their slowly cooled counterparts< Réduire
Mots clés en anglais
GaAs
Annealing
Rate of cooling
Photocurrent
Dark current
Origine
Importé de halUnités de recherche