Enhanced ferroelectric properties in multiferroic epitaxial Ba2EuFeNb4O15 thin films grown by pulsed laser deposition
Langue
en
Article de revue
Ce document a été publié dans
Materials Research Bulletin. 2017, vol. 87, p. 186-192
Elsevier
Résumé en anglais
High-quality thin films of Ba2EuFeNb4O15 have been epitaxially grown on MgO(001) substrates by pulsed laser deposition. Structural investigations indicate the successful growth of the desired c-oriented phase, and showed ...Lire la suite >
High-quality thin films of Ba2EuFeNb4O15 have been epitaxially grown on MgO(001) substrates by pulsed laser deposition. Structural investigations indicate the successful growth of the desired c-oriented phase, and showed four growth variants with the thin film unit cell rotated in-plane by an angle of ±18.4° and ±31° with respect to the MgO substrate unit cell. The epitaxial thin films of Ba2EuFeNb4O15 exhibited a considerable enhancement of ferroelectricity compared to the bulk materials and films with the same composition previously studied. Microelectromechanical characterization of these epitaxial films demonstrated stable ferroelectric properties preserved down to nanoscale. In addition, magnetic ordering was evidenced, which suggests the presence of a magnetic phase within the ferroelectric phase. We therefore demonstrated the synthesis of nanocomposite thin films based on the tetragonal tungsten bronze structure, which are multiferroic at room temperature.< Réduire
Mots clés en anglais
Multiferroic
Epitaxial growth
Thin films
Composite
Origine
Importé de halUnités de recherche