Temperature-induced transport changes in molecular junctions based on a spin crossover complex
CANJEEVARAM BALASUBRAMANYAM, Ram Kumar
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
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Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
CANJEEVARAM BALASUBRAMANYAM, Ram Kumar
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
SQUILLANTINI, Lorenzo
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Università degli Studi di Firenze = University of Florence = Université de Florence [UniFI]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Università degli Studi di Firenze = University of Florence = Université de Florence [UniFI]
CANESCHI, Andrea
Università degli Studi di Firenze = University of Florence = Université de Florence [UniFI]
< Réduire
Università degli Studi di Firenze = University of Florence = Université de Florence [UniFI]
Langue
en
Article de revue
Ce document a été publié dans
Journal of Materials Chemistry C. 2019, vol. 7, n° 18, p. 5343-5347
Royal Society of Chemistry
Résumé en anglais
This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)2)2(phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a ...Lire la suite >
This work describes the study of molecular junctions embedding the spin crossover complex [Fe(H2B(pz)2)2(phen)] as an active switchable thin film. In these junctions we observed that the spin state conversion causes a gradual increase in the current density, which may be due to a crossover from direct tunneling to multi-step hopping.< Réduire
Project ANR
Initiative d'excellence de l'Université de Bordeaux - ANR-10-IDEX-0003
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