SUDZIUS, Markas; ALEKSIEJUNAS, Ramunas; JARAŠIUNAS, Kestutis; VERSTRAETEN, David; LAUNAY, Jean-Claude

doi:10.1088/0268-1242/18/4/330

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SUDZIUS, Markas
Institute of Materials Science and Applied Research

ALEKSIEJUNAS, Ramunas
Institute of Materials Science and Applied Research

JARAŠIUNAS, Kestutis
Institute of Materials Science and Applied Research

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Semiconductor Science & Technology. 2003, vol. 18, n° 4, p. 367-376

Résumé en anglais

We present a novel way to determine the type of dominant carrier photoexcited from deep traps in a photorefractive semiconductor. A numerical analysis of a picosecond free-carrier grating dynamics has revealed an excitation intensity dependent grating diffusive decay time τD as well as effective carrier diffusion coefficient D, when the intensity varied in the range below that required to create a bipolar carrier plasma. According to the numerical analysis, an increase or decrease of effective diffusion coefficient D with excitation can be used as a criterion to distinguish the type of photogenerated carrier. We have verified this method experimentally by measuring dependences of effective D versus excitation density in a number of vanadium-doped and shallow-impurity codoped CdTe and ZnCdTe crystals, using for excitation a picosecond YAG:Nd laser (hν = 1.17 eV). The results were found to be in good agreement with predictions, based on carrier transport peculiarities in photorefractive crystals, and correlated well with the secondary ion mass spectroscopy data for each crystal.< Réduire

Mots clés en anglais

Electric current carriers

Deep traps

Dopants

Four wave mixing

Simulation and Modeling

Photorefractive effect

Arsenic

Vanadium

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Investigation of nonequilibrium carrier transport in vanadium-doped CdTe and CdZnTe crystals using the time-resolved four-wave mixing technique

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