From multilayers to V1-xWxO2±δ films elaborated by magnetron sputtering for decreasing thermochromic transition temperature
VICTOR, Jean-Louis
CEA Le Ripault [CEA Le Ripault]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
CEA Le Ripault [CEA Le Ripault]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
SAUQUES, Laurent
Centre d'expertise et d'essais Paris-Balard [Délégation Générale pour l'Armement (DGA)]
Voir plus >
Centre d'expertise et d'essais Paris-Balard [Délégation Générale pour l'Armement (DGA)]
VICTOR, Jean-Louis
CEA Le Ripault [CEA Le Ripault]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
CEA Le Ripault [CEA Le Ripault]
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
SAUQUES, Laurent
Centre d'expertise et d'essais Paris-Balard [Délégation Générale pour l'Armement (DGA)]
< Réduire
Centre d'expertise et d'essais Paris-Balard [Délégation Générale pour l'Armement (DGA)]
Langue
en
Article de revue
Ce document a été publié dans
Journal of Alloys and Compounds. 2021, vol. 858, p. 157658 (7 p.)
Elsevier
Résumé en anglais
W-doped monoclinic vanadium dioxide VO2(M) thin films with various W contents were successfully deposited by magnetron sputtering method. As-deposited films consisted of multilayers composed of VO2/W bilayers. Further ...Lire la suite >
W-doped monoclinic vanadium dioxide VO2(M) thin films with various W contents were successfully deposited by magnetron sputtering method. As-deposited films consisted of multilayers composed of VO2/W bilayers. Further annealing at 500 °C under Argon for 1 h led to crystallized and homogeneous V1-xWxO2±δ films. 200 nm films were characterized at room temperature by Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Besides, the films were analyzed by temperature-dependent infrared transmittance in the wavelength region 2–25 μm and the effects of W doping on thermochromic properties of VO2 were studied. The results show that the transition temperature gradually decreases with increasing W content. A transition temperature of 21 °C with a high infrared transmittance modulation (≈68%) was finally achieved with a W-doping level of 2.7 at.% which may indicate a strong potential for applications in optical devices as functional materials.< Réduire
Mots clés en anglais
Magnetron sputtering
multilayers
vanadium dioxide
W doping
thermochromic behavior
Origine
Importé de halUnités de recherche