POGGINI, Lorenzo; GONIDEC, Mathieu; GONZÁLEZ-ESTEFAN, Juan; PÉCASTAINGS, Gilles; GOBAUT, Benoît; ROSA, Patrick

doi:10.1002/aelm.201800204

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POGGINI, Lorenzo
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

GONIDEC, Mathieu
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

GONZÁLEZ-ESTEFAN, Juan
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

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Article de revue

Ce document a été publié dans

Advanced Electronic Materials. 2018-09-05, vol. 4, n° 12, p. 1800204 (8 p.)

Wiley

Résumé en anglais

Thin films of a molecular spin crossover (SCO) Iron(II) complex featuring a high transition temperature are grown by sublimation in high vacuum on TSAu and investigated by X-ray and UV photoelectron spectroscopies. Temperature-dependent studies demonstrate that the thermally induced spin crossover behavior is preserved in thin films. A large-area ultrathin switchable spin crossover molecular vertical tunnel junction with top electrodes of the liquid eutectic of gallium and indium, for which the spin-state switching of the films induces a two orders of magnitude change in the tunneling current density flowing through the junction, is reported here. The results on large-area junctions, rationalized by density functional theory calculations, demonstrate the high potential of SCO-based switchable molecular junctions as functional devices.< Réduire

Mots clés en anglais

tunnel junctions

thin films

spin crossover (SCO)

eutectic gallium indium alloy (EGaIn)

DOI

http://dx.doi.org/10.1002/aelm.201800204

Project ANR

Initiative d'excellence de l'Université de Bordeaux - ANR-10-IDEX-0003

Origine

Importé de hal

Unités de recherche

Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB) - UMR 5026