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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierInstitute for Problems of Material Science
dc.contributor.authorARTEMENKO, Alla
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorELISSALDE, Catherine
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHUNG SEU, U-Chan
hal.structure.identifierCentre interuniversitaire de recherche et d'ingénierie des matériaux [CIRIMAT]
dc.contributor.authorESTOURNÈS, Claude
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMORNET, Stéphane
hal.structure.identifierInstitute for Problems of Material Science
dc.contributor.authorBYKOV, I.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
dc.date.issued2010
dc.identifier.issn0003-6951
dc.description.abstractEnWith the promise of electronics breakthrough, giant dielectric permittivity materials are under deep investigations. In most of the oxides where such behavior was observed, charged defects at interfaces are quoted for such giant behavior to occur but the underlying conduction and localization mechanisms are not well known. Comparing macroscopic dielectric relaxation to microscopic dynamics of charged defects resulting from electron paramagnetic resonance investigations we identify the actual charged defects in the case of BaTiO3 ceramics and composites. This link between the thermal activation at these two complementary scales may be extended to the numerous oxides were giant dielectric behavior was found.
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.subject.enHopping conduction
dc.subject.enParamagnetic resonance
dc.subject.enPermittivity
dc.subject.enSilicon compounds
dc.subject.enMatériaux
dc.subject.enBarium compounds
dc.subject.enDielectric relaxation
dc.subject.enFerroelectric ceramics
dc.title.enLinking hopping conductivity to giant dielectric permittivity in oxides
dc.typeArticle de revue
dc.identifier.doi10.1063/1.3495779
dc.subject.halChimie/Matériaux
dc.subject.halSciences de l'ingénieur [physics]/Matériaux
bordeaux.journalApplied Physics Letters
bordeaux.page132901 (3 p.)
bordeaux.volume93
bordeaux.issue13
bordeaux.peerReviewedoui
hal.identifierhal-00530394
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00530394v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Applied%20Physics%20Letters&rft.date=2010&rft.volume=93&rft.issue=13&rft.spage=132901%20(3%20p.)&rft.epage=132901%20(3%20p.)&rft.eissn=0003-6951&rft.issn=0003-6951&rft.au=ARTEMENKO,%20Alla&ELISSALDE,%20Catherine&CHUNG%20SEU,%20U-Chan&ESTOURN%C3%88S,%20Claude&MORNET,%20St%C3%A9phane&rft.genre=article


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