BOUSKA, M.; PECHEV, Stanislav; SIMON, Quentin; NAZABAL, Virginie; GUTWIRTH, J.; NORMANI, S.; NEMEC, P.

doi:10.1117/12.2306503

Métadonnées

Afficher la notice complète

Licence d’utilisation du document

BOUSKA, M.
University of Pardubice

PECHEV, Stanislav
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

SIMON, Quentin
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]

Langue

Communication dans un congrès

Ce document a été publié dans

Conference on Fiber Lasers and Glass Photonics - Materials through Applications, Conference on Fiber Lasers and Glass Photonics - Materials through Applications, 2018-04-22, Strasbourg. 2018

SPIE-INT SOC OPTICAL ENGINEERING

Résumé en anglais

Phase change memory thin films from Ge-Sb-Te system with large (GeTe)(Sb2Te3) ratio have been deposited via UV pulsed laser deposition technique. The studied compositions were Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15. Physico-chemical properties of the Ge-Sb-Te thin films, based on the scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, optical reflectivity, sheet resistance temperature dependences, and variable angle spectroscopic ellipsometry measurements, were studied in order to assess the effect of chemical composition of the deposited layers. All the obtained data confirm the importance of GeTe content in (GeTe)(1-x)(Sb2Te3)(x) thin films.< Réduire

Mots clés en anglais

thin films

phase change memory materials

chalcogenides

Ge-Sb-Te

Métadonnées

Licence d’utilisation du document

Large (GeTe)(Sb2Te3) ratio phase change memory thin films

Langue

Ce document a été publié dans

Résumé en anglais

Mots clés en anglais

DOI

Origine

Unités de recherche