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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorVEILLERE, Amélie
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorGUILLEMENT, Thomas
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorQIANG, Zhi
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorZUHLKE, Graig A.
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorALEXANDER, Dennis R
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSILVAIN, Jean-François
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorHEINTZ, Jean-Marc
hal.structure.identifierCollege of Engineeriing
dc.contributor.authorCHANDRA, Namas
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorLU YONG, Feng
dc.date.issued2011
dc.identifier.issn1944-8244
dc.description.abstractEnThe quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.
dc.language.isoen
dc.publisherWashington, D.C. : American Chemical Society
dc.subject.enDiamond
dc.subject.enSubstrate pretreatment
dc.subject.enChemical and laser etchings
dc.subject.enCobalt diffusion
dc.subject.enResidual stress
dc.subject.enRaman spectroscopy
dc.title.enInfluence of WC-Co substrate pretreatment on diamond film deposition by laser-assisted combustion synthesis
dc.typeArticle de revue
dc.identifier.doi10.1021/am101271b
dc.subject.halChimie/Matériaux
bordeaux.journalACS Applied Materials & Interfaces
bordeaux.page1134-1139
bordeaux.volume3
bordeaux.issue4
bordeaux.peerReviewedoui
hal.identifierhal-00596472
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00596472v1
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