VEILLERE, Amélie; GUILLEMENT, Thomas; QIANG, Zhi; ZUHLKE, Graig A.; ALEXANDER, Dennis R; SILVAIN, Jean-François; HEINTZ, Jean-Marc; CHANDRA, Namas; LU YONG, Feng

doi:10.1021/am101271b

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VEILLERE, Amélie
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Department of Electrical Engineering

GUILLEMENT, Thomas
Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
Department of Electrical Engineering

QIANG, Zhi
Department of Electrical Engineering

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ACS Applied Materials & Interfaces. 2011, vol. 3, n° 4, p. 1134-1139

Washington, D.C. : American Chemical Society

Résumé en anglais

The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.< Réduire

Mots clés en anglais

Diamond

Substrate pretreatment

Chemical and laser etchings

Cobalt diffusion

Residual stress

Raman spectroscopy

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Influence of WC-Co substrate pretreatment on diamond film deposition by laser-assisted combustion synthesis

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