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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierCEA Le Ripault [CEA Le Ripault]
dc.contributor.authorHAMON, Yohann
hal.structure.identifierCEA Le Ripault [CEA Le Ripault]
dc.contributor.authorDOUARD, A.
hal.structure.identifierCEA Le Ripault [CEA Le Ripault]
dc.contributor.authorSABARY, F.
hal.structure.identifierCEA Le Ripault [CEA Le Ripault]
dc.contributor.authorMARCEL, C.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorVINATIER, Philippe
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPECQUENARD, Brigitte
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLEVASSEUR, Alain
dc.date.issued2006
dc.identifier.issn0167-2738
dc.description.abstractEnLiPON films were deposited using radio-frequency magnetron sputtering in a pure N2 gas atmosphere. The influence of rf power, N2 pressure, target–substrate distance and target density on thin film composition and ionic conductivity has been studied. Impedance measurements performed between 25 and 80 °C have indicated that ionic conductivity increases with nitrogen incorporation into the glass structure. An increase in the deposition rate with the target density has also been observed.
dc.language.isoen
dc.publisherElsevier
dc.subject.enSolid electrolyte
dc.subject.enThin films
dc.subject.enIonic conductivity
dc.subject.enSputtering target density
dc.title.enInfluence of sputtering conditions on ionic conductivity of LiPON thin films
dc.typeArticle de revue
dc.identifier.doi10.1016/j.ssi.2005.10.021
dc.subject.halChimie/Matériaux
bordeaux.journalSolid State Ionics
bordeaux.pagep. 257-261
bordeaux.volumevol. 177, n° 3-4
bordeaux.peerReviewedoui
hal.identifierhal-00023560
hal.version1
hal.popularnon
hal.audienceNon spécifiée
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00023560v1
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